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| hexfet power mosfet micro3 tm (sot-23) irlml2246trpbf-1 s g 1 2 d 3 absolute maximum ratings symbol parameter units v ds drain-source voltage v i d @ t a = 25c continuous drain current, v gs @ -10v i d @ t a = 70c continuous drain current, v gs @ -10v i dm pulsed drain current p d @t a = 25c maximum power dissipation p d @t a = 70c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v t j, t stg junction and storage temperature range c thermal resistance symbol parameter typ. max. units r ja junction-to-ambient ??? 100 r ja junction-to-ambient (t<10s) ??? 99 max. -2.6 -2.1 -55 to + 150 12 0.01 -20 1.3 0.80 -11 w c/w a ! features benefits industry-standard pinout sot-23 package ? multi-vendor compatibility compatible with existing surface mount techniques easier manufacturing rohs compliant, halogen-free environmentally friendlier msl1, industrial qualification increased reliability form quantity irlml2246trpbf-1 micro3 ? 000 1 package type standard pack orderable part number base part number v ds -20 v r ds(on) max (@v gs = -4.5v) 135 q g (typical) 2.9 nc i d (@t a = 25c) -2.6 a m ! g d s electric characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage -20 ??? ??? v . . 0 1 1 0. 1.1 1.0 10 100 100 1 gfs forward transconductance 3.4 ??? ??? s q g total gate charge ??? 2.9 ??? q gs gate-to-source charge ??? 0.52 ??? q gd gate-to-drain ("miller") charge ??? 1.2 ??? t d(on) turn-on delay time ??? 5.3 ??? t r rise time ??? 7.7 ??? t d(off) turn-off delay time ??? 26 ??? t f fall time ??? 16 ??? c iss input capacitance ??? 220 ??? c oss output capacitance ??? 70 ??? c rss reverse transfer capacitance ??? 48 ??? source - drain ratings and characteristics symbol parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current (body diode) v sd diode forward voltage ??? ??? -1.2 v t rr reverse recovery time ??? 17 26 ns q rr reverse recovery charge ??? 6.2 9.3 nc ??? ??? ??? ??? pf a -1.3 -11 v dd =-10v na nc ns v ds = v gs , i d = -10 a v ds = -16v, v gs = 0v v ds = -16v, v gs = 0v, t j = 125c r ds(on) v gs = -2.5v, i d = -2.1a static drain-to-source on-resistance drain-to-source leakage current a m conditions v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = -4.5v, i d = -2.6a mosfet symbol showing the v ds =-10v conditions v gs = -4.5v v gs = 0v v ds = -16v ? = 1.0khz r g = 6.8 v gs = -4.5v di/dt = 100a/ s v gs = 12v v gs = -12v t j = 25c, i s = -2.6a, v gs = 0v integral reverse p-n junction diode. v ds = -10v, i d = -2.6a i d = -2.6a i d = -1.0a t j = 25c, v r = -15v, i f =-2.6a repetitive rating; pulse width limited by max. junction temperature. pulse width 400 s; duty cycle 2%. surface mounted on 1 in square cu board. refer to application note #an-994. " ! fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -10v -4.5v -3.0v -2.5v -2.3v -2.0v -1.8v bottom -1.5v 60 s pulse width tj = 25c -1.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -1.5v 60 s pulse width tj = 150c vgs top -10v -4.5v -3.0v -2.5v -2.3v -2.0v -1.8v bottom -1.5v 0.5 1.0 1.5 2.0 2.5 3.0 3.5 -v gs , gate-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -15v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -2.6a v gs = -4.5v ! fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 012345678 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -16v v ds = -10v v ds = -4.0v i d = -2.6a 0.2 0.4 0.6 0.8 1.0 1.2 -v sd , source-to-drain voltage (v) 0.1 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 0.10 1.0 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) t a = 25c tj = 150c single pulse 100 sec 1msec 10msec # ! fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. ambient temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 100 1000 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a fig 10b. switching time waveforms $ %$ 1 0.1 % $ $ &' + - v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10a. switching time test circuit 25 50 75 100 125 150 t a , ambient temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 - i d , d r a i n c u r r e n t ( a ) ( ! fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14b. gate charge test circuit fig 14a. basic gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s 20k s 1 2 3 4 5 6 7 8 9 10 11 12 -v gs, gate -to -source voltage (v) 50 100 150 200 250 300 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = -2.6a t j = 25c t j = 125c 0 2 4 6 8 10 12 14 16 -i d , drain current (a) 0 200 400 600 800 1000 1200 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = -2.5v vgs = -4.5v ) ! fig 15. typical threshold voltage vs. junction temperature typical power vs. time 1e-7 1e-6 1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 200 400 600 800 1000 s i n g l e p u l s e p o w e r ( w ) -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 - v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = -10 a i d = -250 a ! micro3 (sot-23 / to-236ab) part marking information 0.08 0.88 0.01 0.89 0.95 b s c millimet ers mi n e e e1 d l a a1 a2 c m o b s y min max max .036 .0375 bsc dimensions inches b0.30 bbb 0.15 .008 ccc .006 0.25 bsc l1 l0.400.60 .0118 bsc aaa 0.20 .004 0 8 8 0 2.80 1.20 0 e1 d 5 6 3 12 ccc cb a b 5 6 e e1 a2 a a1 3x b aaa c 3 s u r f 0 3x l l1 h 4 7 2.10 e1 1.90 b s c .075 b s c .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 e bbb cb a l2 0.54 re f l2 .021 ref not es 1. dimens ioning and t ole rancing per as me y14.5m-1994. 4 dat um plane h is l ocat ed at t he mol d part ing line. 5 dat um a and b t o b e det er mine d at dat um plane h. 6 dimens ions d and e1 are me as ure d at dat um plane h. 2. dimens ions are s hown in millimet e rs [inches ] 3. cont r olling dime ns ion: mil lime t e r. 7 dimension l is the lead lengt h for soldering to a subst rate. 8 . ou t l ine conf or ms t o j e de c ou t l i ne t o-2 36ab . dime ns ions does not include mold prot rus ions or in t e r l e ad f l as h . mol d p r ot r u s ion or i nt e r l e ad f l as h s hall not e xce ed 0.25 mm [.010 inch] pe r s ide. 1.90 [.075] 0.95 [.0375] 0.972 [.038] 2.742 [.1079] 0.802 [.031] re commende d f oot pr int 3x 3x l e ad as s i gnme nt 1. gate 2. s ource 3. drain 0.08 0.88 0.01 0.89 0.95 bs c millimeters mi n e e e1 d l a a1 a2 c m o b s y mi n max max .036 .0375 bsc dime ns ions inches b0.30 bbb 0.15 .008 ccc .006 0.25 b s c l1 l 0.40 0.60 .0118 bsc aaa 0.20 .004 0 8 8 0 2.80 1.20 0 2.10 e1 1.90 bs c .075 bs c .0119 .0032 .111 .083 .048 .055 .119 .103 .0196 .0078 .0039 .044 .0004 .035 .040 .0236 .0158 1.02 0.20 0.50 2.64 3.04 1.40 1.12 0.10 0.10 0.54 ref l2 .021 ref f = irlml6401 aa 27 lot code lead free dat e code e = irlml6402 x = part number code reference: d = irlml5103 c = irlml6302 b = irlml2803 a = irlml2402 w = (1-26) if preceded by last digit of calendar year w = (27-52) if preceded by a letter y 8 3 1 2 5 4 7 6 0 9 y c 03 wor k we e k 01 02 a w b 04 d 24 26 25 x z y wor k we e k w h = irlml5203 g = irlml2502 k h g f e d c b j y 51 29 28 30 c b d 50 x 52 z note: a l i ne above the wor k week (as shown here) indicates lead - free. i = irlml0030 j = irlml2030 l = irlml0060 m = irlml0040 k = irlml0100 n = irlml2060 p = irlml9301 r = irlml9303 cu wi r e halogen free part number x = irlml2244 w = irf ml8244 v = irlml6346 u = irlml6344 t = irlml6246 s = irlml6244 z = irf ml9244 y = irlml2246 indus trial vers ion 2007 year 2003 2001 2002 2005 2004 2006 2007 2009 2008 2010 2003 2001 year 2002 2005 2004 2006 2009 2008 2010 2017 2013 2011 2012 2015 2014 2016 2017 2019 2018 2020 2013 2011 2012 2015 2014 2016 2019 2018 2020 * ! ? 2.05 ( .080 ) 1.95 ( .077 ) tr feed direction 4.1 ( .161 ) 3.9 ( .154 ) 1.6 ( .062 ) 1.5 ( .060 ) 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 1.1 ( .043 ) 0.9 ( .036 ) 4.1 ( .161 ) 3.9 ( .154 ) 0.35 ( .013 ) 0.25 ( .010 ) 8.3 ( .326 ) 7.9 ( .312 ) 1.32 ( .051 ) 1.12 ( .045 ) 9.90 ( .390 ) 8.40 ( .331 ) 178.00 ( 7.008 ) max. notes: 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. ? qualification standards can be found at international rectifier?s web site: http://www.irf.com/product-info/reliability ?? applicable version of jedec standard at the time of product release ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ ms l 1 (per je de c j-s td-020d ?? ) rohs c ompliant yes qualification information ? qualification level industrial (per jedec jes d47f ?? guidelines) moisture sensitivity level micro3 ? (sot-23) revision history date comment 10/28/2014 ? . |
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